Joseph Salzman was born in Buenos Aires, Argentina, in 1945. He received his BSc., MSc., and PhD. in physics from Tel-Aviv University in 1973, 1979, and 1984, respectively.
Epitaxial growth of semiconductor heterostructures and devices.
In the technological era, real progress does not imply just novel uses of a computer, a surgical scalpel, development of a novel electron microscope, a robot, or the invention of a new drug. Instead, new avenues of expression, novel life-stiles and social values, and perhaps, if one dreams on farther horizons, new meanings for human existence. Such goals may disrupt, and tear us up from boredom.
Department of Electrical Engineering Micro-Nano Research Center Zisapel building Room 455 Technion, Israel Institute of Technology Technion City, Haifa 32000, Israel